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  1 of 16 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems 1 rf in 2 gnd1 3 vpd 5 gnd2 4rf out RF2878 3v low noise amplifier/ 3v pa driver amplifier the RF2878 is a low noise amplifier with a very high dynamic range designed for digital cellular applications. the device fu nctions as an outstanding front end low noise amplifier or power amplifier driver am plifier in the transmit chain of digital subscriber units where low transmit noise power is a concern. when used as an lna, the bias current can be set externally . when used as a pa driver, the ic can operate directly from a single cell li-ion battery and includes a power down feature that can be used to completely turn off the device. the ic is featured in a standard sot 5-lead plastic package. features ? low noise and high intercept point ? adjustable bias current ? power down control ? single 2.5v to 5.0v power supply ? 150mhz to 2500mhz opera- tion applications ? cdma/fm cellular pcs lna ? low noise transmit driver amplifier ? general purpose amplifica- tion ? commercial and consumer systems RF2878 3v low noise amplifier/ 3v pa driver amplifier RF2878 pcba-d fully assembled evaluation board (driver) RF2878 pcba-l fully assembled evaluation board (lna) rev a4 ds081006 9 rohs compliant & pb-free product package style: sot 5-lead
2 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage, v cc < 5v power down voltage, v pd < 3v input rf level +10 dbm operating ambient temperature -40 to +85 c storage temperature -40 to +150 c operating junction temperature 150 c i cc 30 ma parameter specification unit condition min. typ. max. overall rf frequency range 150 2500 mhz low noise amplifier 881mhz performance schematic per lna application; t=25c, rf=881mhz, v pd =2.8v, r1=1k gain 20 db v cc =3.0v, i cc =7.6ma 20 db v cc =2.7v, i cc =7.5ma noise figure 1.4 1.6 db v cc =3.0v, i cc =7.6ma 1.4 1.6 db v cc =2.7v, i cc =7.5ma input ip3 +6.0 dbm v cc =3.0v, i cc =7.6ma +5.5 dbm v cc =2.7v, i cc =7.5ma low noise amplifier 1950mhz performance schematic per lna application; t=25c, rf=1950mhz, v pd =2.8v, r1=1k gain 13 db v cc =3.0v, i cc =6.4ma 13 db v cc =2.7v, i cc =6.3ma noise figure 1.3 1.5 db v cc =3.0v, i cc =6.4ma 1.3 1.5 db v cc =2.7v, i cc =6.3ma input ip3 +16.5 dbm v cc =3.0v, i cc =6.4ma +16.0 dbm v cc =2.7v, i cc =6.3ma driver amplifier 836mhz performance schematic per driver amplifier application; t=25c, rf=836mhz, v pd =2.8v gain 19.5 20.5 21.5 db v cc =3.5v 19.5 20.5 21.5 db v cc =3.0v 19.5 20.5 21.5 db v cc =2.7v output ip3 25 +32.0 35 dbm v cc =3.5v +29.0 dbm v cc =3.0v +27.8 dbm v cc =2.7v noise figure 1.9 2.0 db v cc =3.5v 1.85 2.0 db v cc =3.0v 1.8 2.0 db v cc =2.7v reverse isolation 25 db v cc =3.5v 25 db v cc =3.0v 25 db v cc =2.7v caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. driver amplifier 836mhz performance, cont. input vswr 1.8:1 2.0:1 output vswr 1.25:1 2.0:1 using external lc network used on evaluation board. p 1db 14.4 dbm v cc =3.5v 12.5 dbm v cc =3.0v 11.5 dbm v cc =2.7v power supply t=25 c voltage (v cc )3.5v voltage (v pd )2.8v current consumption - driver amplifier (see note 1) 14.0 21.5 29.0 ma v cc =3.5v; v pd =2.8v power down 10 av cc =3.5v; v pd 0.9 v driver amplifier 1880mhz performance schematic per driver amplifier application; t=25c, rf=1880mhz, v pd =2.8v gain 14.0 db v cc =3.5v 14.0 db v cc =3.0v 14.0 db v cc =2.7v output ip3 +35.0 dbm v cc =3.5v +31.0 dbm v cc =3.0v +28.8 dbm v cc =2.7v noise figure 1.85 2.0 db v cc =3.5v 1.8 2.0 db v cc =3.0v 1.75 2.0 db v cc =2.7v reverse isolation 19 db v cc =3.5v 19 db v cc =3.0v 19 db v cc =2.7v input vswr 1.6:1 2.0:1 output vswr 1.6:1 2.0:1 using external lc network used on evaluation board. p 1db 14 15.6 dbm v cc =3.5v 13 14.1 dbm v cc =3.0v 12 13.1 dbm v cc =2.7v note 1: current consumption shown for i cc only. i pd typical=2.0ma with v pd =2.8v
4 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. power supply t=25 c voltage (v cc )3.5v voltage (v pd )2.8v current consumption - driver amplifier (see note 2) 14 21 29 ma v cc =3.5v; v pd =2.8v power down 10 av cc =3.5v; v pd 0.9 v note 2: current consumption shown for i cc only. i pd typical=2.0ma with v pd =2.8v
5 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing pin function description interface schematic 1rf in rf input pin. this pin is dc coupled and matched to 50 at 836 mhz. 2gnd1 ground connection. keep traces physically short and connect immediately to ground plane for best performance. 3vpd for low noise amplifier applications, this pin is used to control the bias cur- rent. see plots for bias current settings. an external resistor (r1) can be used to set the bias current for any v pd voltage. for driver amplifier applications, this is the power down pin for the ic. v pd =2.8v +/- 0.1v is required for proper operation. v pd <0.9v turns off the part. external rf bypassing is required. the trace length between the pin and the bypass capacitors should be minimized. the ground side of the bypass capacitors should connect immediately to ground plane. nominal current required for v pd =2.8v is 2.0ma typical and 3.0ma max (@ v pd =2.9v). 4rf out amplifier output pin. this pin is an open-collector output. it must be biased to either v cc or pin 4 through a choke or matching inductor. this pin is typi- cally matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. re fer to application schematics. 5gnd2 ground connection. keep traces physically short and connect immediately to ground plane for best performance. rf in rf ou t to bias circuit pd 1 1.60 + 0.01 0.400 2.80 + 0.20 2.90 + 0.10 0.45 + 0.10 3 max 0 min 0.127 0.15 0.05 1.44 1.04 dimensions in mm. 0.950
6 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic: 350mhz lna application schematic: 350mhz linear driver 1 2 3 5 4 22 nf j1 rf in 220 pf 10 nf 1 k vpd 39 nh 4 pf j2 rf out 220 pf 10 nf vcc vcc=3.5v, vpc=2.8v icc=7ma gain=25.5db nf=1.75db iip3=-4.5dbm s11=-2.8db s22=-10.4db 1 2 3 5 4 c3 22 nf j1 rf in c2 220 pf c1 10 nf r1 0 vpd 39 nh 4.3 pf j2 rf out c5 220 pf c6 10 nf vcc vcc=3.5v, vpc=2.7v icc=20ma gain=26db oip3=27.5dbm op1db=13.8dbm s11=s22=-14db 50 strip 50 strip 50 strip 510 56 nh
7 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic: 1200mhz to 1600mhz driver (set resistance at v pd =1000 for lna) application schematic: 1800mhz to 2170mhz linear driver (set resistance at v pd =1000 for lna) 1 2 3 5 4 22 nf j1 rf in 100 pf 10 nf 0 vpd 6.8 nh 1.5 pf j2 rf out 100 pf 10 nf vcc vcc=3.5v, vpc=2.7v icc=21ma gain=17db to 14.2db from 1200mhz to 1600mhz s11=-8.7db to -23db from 1200mhz to 1600mhz s22=-14.5db to -8.1db from 1200mhz to 1600mhz 1 2 3 5 4 22 nf j1 rf in 100 pf 10 nf 0 vpd 2.7 nh 1 pf j2 rf ou t 100 pf 10 nf vcc vcc=4v, vpc=2.7v icc=21ma gain=13.8db to 12.3db from 1800mhz to 2170mhz s11=-11db to -20db from 1800mhz to 2170mhz s22=-11.5db to -12.5db from 1800mhz to 2170mhz oip3=36dbm to 34.5dbm from 1800mhz to 2170mhz op1db=16dbm to 17dbm from 1800mhz to 2170mhz **47 **47 dropping r for use with vcc=5v. 5-0.021*47=4v at RF2878 collector
8 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic: low noise amplifier ~1950mhz operation application schematic: driver amplifier ~1880mhz operation 1 2 3 5 4 22 nf j1 rf in 100 pf 10 nf 1k vpd 3.3 nh 1 pf j2 rf out 100 pf 10 nf vcc 1 2 3 5 4 22 nf j1 rf in 100 pf 10 nf 0 vpd 3.3 nh 1 pf j2 rf out 100 pf 10 nf vcc
9 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic: low noise amplifier ~881mhz operation evaluation board schematic: driver amplifier ~836mhz operation 1 2 3 5 4 c3 22 nf 50 strip j1 rf in c2 220 pf c1 10 nf r1 1k vpd 50 strip c4 2 pf 50 strip j2 rf out l1 12 nh c5 220 pf c6 10 nf vcc 2361410 rev- p1-1 vpd gnd c7 4.7 f vcc p1 1 2 3 1 2 3 5 4 c3 22 nf 50 strip j1 rf in c2 220 pf c1 10 nf r1 0 vpd 50 strip c4 2 pf 50 strip j2 rf out l1 12 nh c5 220 pf c6 10 nf vcc 2361400 rev- p1 1 2 3 p1-1 vpd gnd vcc c7 4.7 f
10 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board layout - 900mhz driver board size 0.948? x 1.063? board thickness 0.031?; board material fr-4 evaluation board layout - 900mhz lna
11 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . theory of operation this section will focus on a variety of applications outside th e nominal, for the purpose of de monstrating RF2878 versatility. application schematics pertaining to topics discussed can be found within the data sheet for reference. first, an application for linear driver, covering 1800mhz to 2170mhz. operating condition: v cc =4v v pd =2.7v i cc =21ma note 0 value for bias resistor at v pd in the application schematic, set for increa sed current/ip3. typical specs are listed along with schematic. v cc =4v contributes to enhanced compression point (16dbm to 17dbm). junction temperature seen for ambi- ent condition=85c will be a consideration in setting v cc /v pd . the above biasing condition yields t j =132c. thus, the condi- tions chosen allow for highly reliable operatio n while providing impressive linear performance. using a 5v supply rail is often convenient from a design standpoint. in the 1800mhz to 2170mhz driver application already discussed, v cc =4v is recommended in order to maintain highest reliability. an option for using v cc =5v is shown in the appli- cation schematic. use of a si mple dropping resistor at v cc provides 4.0v at output collector, resulting in the suggested device operating condition. power dissipation in th e resistor=0.021 watt, easily handled by standard resistors available to the system designer. moving to another application, consider the schematic for 350m hz lna. noise figure in this case=1.75db. in contrast to above linear driver, bias resistor is set at 1000 to limit current. in the specifications next to schematic, see that input return loss is somewhat degraded at 2.8db. the absence of input matchi ng is intentional, as the integrated circuit design was geared for optimum noise figure with input looking back into 50 . note that in the nominal cases, 881mhz and 1950mhz, input return losses are favorable in the absence of input match. in converting 350mhz lna to driver, noise figure will no longer be a key specification. as such, RF2878 device s-parameter data can be used to match input for favorable return loss. the resulting driver application schematic is found below that for t he lna. when matching in bands other than those covered here , RF2878 s-parameter data can be obtained through applica- tions/sales contact at rfmd. as a final example, refer to driver application schematic cove ring 1200mhz to 1600mhz. this match provides favorable return losses over the entire band. in summary, the examples above are intended to aid the system designer in determining suitable matches and device operat- ing points for both lna and driver applications. key points to consider: 1. in setting bias condition to accommodate both lna and driver , the first consideration is choice of bias resistance at v pc . linearity versus power dissipation trade-offs ar e taken into account in the driver application. 2. noise figure versus input return loss trade-off must be consid ered in the specific case of low frequency lna application. driver application here allows for flexibility in optimizing input match for return loss. 3. higher frequency lna sees favorable return loss in the absence of input match. thus, optimization at frequency >800mhz involves matching adjust to output l-c only. 4. small signal s-parameter simulation proves an excellent meth od for obtaining starting point matches in the design process.
12 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . driver amp 836 mhz i cc versus v pd 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 2.7 2.8 2.9 3.0 v pd i cc (ma) 2.7v icc (ma) 3.0v icc (ma) 3.3v icc (ma) 3.6v icc (ma) driver amp 836 mhz gain versus v pd 20.72 20.74 20.76 20.78 20.80 20.82 20.84 20.86 20.88 20.90 20.92 2.70 2.80 2.90 3.00 v pd gain (db) 2.7v gain (db) 3.0v gain (db) 3.3v gain (db) 3.6v gain (db) driver amp 836 mhz oip3 versus v pd 27.0 28.0 29.0 30.0 31.0 32.0 33.0 2.7 2.8 2.9 3.0 v pd oip3 (dbm) 2.7v oip3 (dbm) 3.0v oip3 (dbm) 3.3v oip3 (dbm) 3.6v oip3 (dbm) driver amp 836 mhz p out 1db versus v pd 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 2.72.82.93.0 v pd p out 1db (dbm) 2.7v p 1db (dbm) 3.0v p 1db (dbm) 3.3v p 1db (dbm) 3.6v p 1db (dbm) driver amp 836 mhz noise figure versus v pd 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.70 2.80 2.90 3.00 v pd nf (db) 2.7v nf (db) 3.0v nf (db) 3.3v nf (db) 3.6v nf (db)
13 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . low noise amplifier 881 mhz gain versus i cc 19.55 19.60 19.65 19.70 19.75 19.80 19.85 19.90 19.95 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 i cc gain (db) 2.7v gain (db) 3.0v gain (db) 3.3v gain (db) 3.6v gain (db) low noise amplifier 881 mhz oip3 versus i cc 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0 28.5 29.0 6.06.57.07.58.08.59.09.510.0 i cc (ma) oip3 (dbm) 2.7v oip3 (dbm) 3.0v oip3 (dbm) 3.3v oip3 (dbm) 3.6v oip3 (dbm) low noise amplifier 881 mhz iip3 versus i cc 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6.06.57.07.58.08.59.09.510.0 i cc (ma) iip3 (dbm) 2.7v iip3 (dbm) 3.0v iip3 (dbm) 3.3v iip3 (dbm) 3.6v iip3 (dbm) low noise amplifier 881 mhz p out 1db versus i cc 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 i cc (ma) p out 1db (dbm) 2.7v pout 1db (dbm) 3.0v pout 1db (dbm) 3.3v pout 1db (dbm) 3.6v pout 1db (dbm) low noise amplifier 881 mhz noise figure versus i cc 1.33 1.34 1.35 1.36 1.37 1.38 1.39 1.40 1.41 1.42 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 i cc nf (db) 2.7v nf (db) 3.0v nf (db) 3.3v nf (db) 3.6v nf (db)
14 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersio n gold. typical thickness is 3 inch to 8 inch gold over 180 inch nickel. pcb land pattern recommendation pcb land patterns are based on ipc-sm-782 standards when po ssible. the pad pattern shown has been developed and tested for optimized assembly at rfmd; however, it may require so me modifications to address co mpany specific assembly pro- cesses. the pcb land pattern has been develope d to accommodate lead and package tolerances. pcb metal land pattern pin 1 a = 0.70 x 1.00 (mm) typ. pin 5 dimensions in mm. a a a a a 2.60 0.95 typ. 1.90 typ. figure 1. pcb metal land pattern (top view)
15 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) so lder mask is recommended. the solder mask fo otprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or reques ted from the pcb fabrication supplier. a a a a a 2.60 pin 1 a = 0.90 x 1.20 (mm) typ. pin 5 dimensions in mm. 0.95 typ. 1.90 typ. figure 2. pcb solder mask (top view) rohs compliant: yes package total weight in grams (g): 0.014 compliance date code: na bill of materials revision: - pb free category: e3 pb cd hg cr vi pbb pbde die 000000 molding compound 000000 lead frame 000000 die attach epoxy 000000 wire 000000 solder plating 000000 * directive 2002/95/ec of the european parliament and of th e council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment rohs* banned material content bill of materials parts per million (ppm) this rohs banned material content declaration was prepared solely on information, including analytical data, provided to rfmd b y its suppliers, and applies to the bill of materials (bom) revision noted above.
16 of 16 RF2878 rev a4 ds081006 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com .


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